IGBT: Insulated-Gate Bipolar Transistor

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IGBT: Insulated-Gate Bipolar TransistorCombination BJT and MOSFET High Input Impedance (MOSFET) Low On-state Conduction Losses (BJT) High Voltage and Current Ratings Symbol

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Cross-Sectional View of an IGBTMetalSilicon DioxideMetal

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IGBT Equivalent Circuit for VGE

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IGBT Equivalent Circuit for VGE>VT+ VCCNPN Transistor becomes forward biased at the BE, drawing current from the Base of the PNP transistor.MOS transistor conducts, drawing current from the Base of the PNP transistor.PNP transistor turns ON, RMOD decreases due to carrier injection from the PNP Emitter.

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Channel is Induced When VGE>VTInduced ChannelelectronsRMODPNPRBENPN

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IGBT Output CharacteristicsFollows an SCR characteristic

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IGBT Transfer Characteristic

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IGBT Used as a Switch

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Fairchild FGA25N120AND IGBT

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Last Updated: 8th March 2018

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